(China (Mainland))
Product Summary
The FQA11N90C is an N-Channel MOSFET. The N-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQA11N90C is well suited for high efficiency switch mode power supplies.
Parametrics
FQA11N90C absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 900 V; (2)Drain Current, Continuous (TC= 25℃), ID: 11.0 A; Continuous (TC= 100℃), ID: 6.9 A; (3)Drain Current - Pulsed, IDM: 44.0 A; (4)Gate-Source Voltage, VGSS: ±30 V; (5)Single Pulsed Avalanche Energy, EAS: 960 mJ; (6)Avalanche Current, IAR: 11.0 A; (7)Repetitive Avalanche Energy, EAR: 30 mJ; (8)Peak Diode Recovery dv/dt, dv/dt: 4.0 V/ns; (9)Power Dissipation (TC= 25℃), PD: 300 W; Derate above 25℃: 2.38 W/℃; (10)Operating and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (11)Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds, TL: 300℃.
Features
FQA11N90C features: (1)11A, 900V, RDS(on)= 1.1Ω @VGS= 10 V; (2)Low gate charge (typical 60 nC); (3)Low Crss ( typical 23 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
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 FQA11N90C |
Fairchild Semiconductor |
MOSFET 900V N-Ch Q-FET advance C-Series |
Data Sheet |
Negotiable |
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FQA11N90C_F109 |
Fairchild Semiconductor |
MOSFET 900V N-Ch Q-FET advance C-Series |
Data Sheet |
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